SK Hynix unveils advanced packaging roadmap for next-gen HBM at Hot Chips 2026
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SK Hynix presented its advanced packaging strategy for next-generation HBM memory at Hot Chips 2026. The company detailed technologies including Intel EMIB and 3D structures to address scaling challenges. The roadmap targets HBM4 with up to 48 GB capacity and over 2 TB/s bandwidth.
Key Facts
- SK Hynix presented its HBM packaging roadmap at Hot Chips 2026, highlighting Intel EMIB and future 3D structures.
- Current HBM stacks reach 16-Hi with 1024 IOs and 16 channels through a silicon interposer.
- HBM4 targets up to 48 GB capacity, 2048 GB/s bandwidth, and 775 µm z-height.
- SK Hynix uses Advanced MR-MUF for 16-Hi HBM3E with warpage control and fine-pitch interconnection.
HBM Packaging Challenges
SK Hynix engineer Jaesik Lee presented the 'Advanced Packaging for High-Bandwidth Memory' brief at Hot Chips 2026. HBM stacks connect multiple DRAM core dies to a base die using through-silicon vias (TSVs). A 16-Hi stack comprises four ranks, with four channels per slice and 16 banks total. HBM and GPU are separate chips mounted on the same silicon interposer using 2.5D packaging.
HBM4 Specifications
HBM4 increases package height and size, integrating more TSVs and micro bumps than HBM3E. The HBM4 package measures 12.8 x 11 mm² with 16,148 base micro-bumps and over 20,000 TSVs. HBM4 delivers over 2 TB/s bandwidth, 40% lower power efficiency, and 14% better thermal resistance than HBM3E. SK Hynix's HBM4 roadmap includes 24 Gb DRAM densities, 36 GB capacities, and 2048 IO bits.
Packaging Technology Comparison
Two main HBM packaging technologies are Thermo-Compression with Non-Conductive Film (TC+NCF) and Mass Reflow with Molded Underfill (MR+MUF). TC+NCF offers better resistance to die warpage but has higher thermal resistivity and lower productivity. MR+MUF provides higher productivity and lower thermal resistivity but is more susceptible to chip warpage and gap fill drawbacks. SK Hynix's Advanced MR-MUF for 16-Hi HBM3E reduces chip thickness to 0.9x, gap height to 0.5x, and bump pitch to 0.5x.
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SK Hynix unveils advanced packaging roadmap for next-gen HBM at Hot Chips 2026
